| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multiple-value recording element wherein an increase in resistance is suppressed and the allowable width of magnetization inversion current density is large, and to provide a magnetic recording device. <P>SOLUTION: The spin injection magnetization inverting element is provided with two or more nonmagnetic isolation layers and a ferromagnetic free layer on the same surface of a ferromagnetic fixed layer, or it is provided with two or more ferromagnetic free layers on the same surface of the nonmagnetic isolation layer formed on the ferromagnetic fixed layer. It is preferable to drive each of elements by one FET. The recording device is formed by connecting a plurality of spin injection magnetization inverting elements which are provided with two ferromagnetic free layers, respectively. A bit line is wired in one ferromagnetic free layer; a word line is wired in the other ferromagnetic free layer, and a writing word line is wired in the ferromagnetic fixed layer. When any two lines among the three lines are selected, the spin injection magnetization inverting element is 1 or less as conducting between the two lines. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
