发明名称 |
METHOD FOR MAKING A SEMICONDUCTOR STRUCTURE USING SILICON GERMANIUM |
摘要 |
A semiconductor substrate having a silicon layer is provided. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate having an oxide layer underlying the silicon layer. An amorphous or polycrystalline silicon germanium layer is formed overlying the silicon layer. Alternatively, germanium is implanted into a top portion of the silicon layer to form an amorphous silicon germanium layer. The silicon germanium layer is then oxidized to convert the silicon germanium layer into a silicon dioxide layer and to convert at least a portion of the silicon layer into germanium-rich silicon. The silicon dioxide layer is then removed prior to forming transistors using the germanium-rich silicon. In one embodiment, the germanium-rich silicon is selectively formed using a patterned masking layer over the silicon layer and under the silicon germanium layer. Alternatively, isolation regions may be used to define local regions of the substrate in which the germanium-rich silicon is formed.
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申请公布号 |
US2007082453(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
US20060609664 |
申请日期 |
2006.12.12 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS K.;BARR ALEXANDER L.;SADAKA MARIAM G.;WHITE TED R. |
分类号 |
H01L21/20;H01L21/31;H01L21/316;H01L21/321;H01L21/8238;H01L21/84;H01L27/12;H01L29/10 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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