发明名称 |
Method for passivating the surface of semiconductor silicon circuits and discrete components involves locally exposing surface of silicon and producing primary needle-like silicon structures by reactive ion etching |
摘要 |
<p>The method involves locally exposing the surface of the silicon and then producing primary needle-like silicon structures with nano dimensions by means of a reactive ion etching process. This structured silicon surface is then transformed by thermal oxidation completely into secondary similarly needle-like silicon dioxide structures.</p> |
申请公布号 |
DE102005048361(A1) |
申请公布日期 |
2007.04.12 |
申请号 |
DE20051048361 |
申请日期 |
2005.10.10 |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
BACH, KONRAD;GAEBLER, DANIEL |
分类号 |
H01L21/316;B82B3/00;C23C8/00;H01L23/29;H01L31/0232;H01L31/18 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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