| 摘要 |
PROBLEM TO BE SOLVED: To cope with the problem that a normally-off characteristic is required in a field-effect transistor (HEMT) that uses a 2-dimensional electronic gas layer. SOLUTION: On a first principal plane 11 of a main semiconductor region 1 including an electron running layer 8 and n-type electron supply layer 9, a source electrode 3, a drain electrode 4, and a gate electrode 5 are prepared, and an n-type organic semiconductor film 6 is prepared as well. The n-type electron supply layer 9 is made to be thin so that a normally-off characteristic can be obtained. The n-type organic semiconductor film 6 compensates the lowering of an electron concentration at a 2DEG layer 14 based on the thin n-type electron supply layer 9, serving to prevent a decrease of ON-resistance. COPYRIGHT: (C)2007,JPO&INPIT |
