| 发明名称 |
METHOD AND SYSTEM FOR ETCHING SILICON OXIDE AND SILICON NITRIDE WITH HIGH SELECTIVITY RELATIVE TO SILICON |
| 摘要 |
<p>A method and system for etching features in a substrate, whereby silicon oxide or silicon nitride or both are etched with high selectivity relative to silicon. In one embodiment, the process chemistry utilized to achieve high selectivity includes trifluoromethane (CHF3), difluoromethane (CH2F2), an oxygen containing gas, such as O2, and an optional inert gas, such as argon.</p> |
| 申请公布号 |
WO2007040716(A2) |
申请公布日期 |
2007.04.12 |
| 申请号 |
WO2006US27653 |
申请日期 |
2006.07.14 |
| 申请人 |
TOKYO ELECTRON LIMITED;KIDA, HANAKO;HAGIHARA, MASAAKI;KO, AKITERU |
发明人 |
KIDA, HANAKO;HAGIHARA, MASAAKI;KO, AKITERU |
| 分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
| 代理机构 |
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