FLASH MEMORY UNIT AND METHOD OF PROGRAMMING A FLASH MEMORY DEVICE

摘要

Disclosed are a flash memory unit and a method of programming a flash memory device. The method of programming can include applying respective programming voltages to a control gate and a drain of the memory device. A source bias potential can be applied to a source of the memory device. The application of the source bias potential can be controlled with the selective application of one of the programming voltages to a source bias switching device.