| 摘要 |
A semiconductor storage device having a word line driving circuit of a small circuit scale, and operating in stability. The device includes a first driving circuit 11 for driving a word line driving signal 15 towards a first potential, a second driving circuit 12 for driving the word line driving signal 15 towards a second potential, a third driving circuit 13 for driving the word line driving signal 15 to a third potential, and a driving control circuit 14. This driving control circuit 14 actuates the first driving circuit 11 when the input signal 16 is at a first logical value, while actuating the second driving circuit 12 when the input signal 16 transfers from the first logical value to the second logical value and actuating the third driving circuit 13 on detection that the word line driving signal 15 has been driven towards the second potential.
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