发明名称 |
Magnetic Random Access Memory Device and Sensing Method Thereof |
摘要 |
A magnetic random access memory (MRAM) device includes sense lines, a selector, a reading circuit and a writing circuit. Each sense line is coupled to one or more MRAM cells. The selector is used to select one of the sense lines to allow a read or write operation. The reading circuit is coupled to the sense lines and provides a first sense current to the selected sense line during the read operation. The writing circuit is coupled to the sense lines and provides a second sense current to the selected sense line during the write operation.
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申请公布号 |
US2007076470(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20060530714 |
申请日期 |
2006.09.11 |
申请人 |
NORTHERN LIGHTS SEMICONDUCTOR CORP. |
发明人 |
KUO CHIEN-TEH;LAI JAMES C. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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