| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for verifying optical proximity effect correction using a layout-to-layout inspection method that enables accurate and precise inspection of differences between an original design of a semiconductor device and a revised design of the semiconductor device and verification of accuracy of the optical proximity effect correction by considering exposure conditions. <P>SOLUTION: The method for verifying optical proximity effect correction includes steps of: performing optical proximity effect correction of an original design of a semiconductor device to prepare a revised design of the semiconductor device; comparing the original design of the semiconductor and the revised design of the semiconductor with each other; dividing deviation patterns, obtained by results of the comparison, according to an illumination system; and comparing the divided deviation patterns respectively to reference values to determine whether or not any error in the optical proximity effect correction occurs. <P>COPYRIGHT: (C)2007,JPO&INPIT |
