METHOD FOR CHANGING THRESHOLD VOLTAGE OF DEVICE IN RESIST ASHER

摘要

A method for forming a dopant in a substrate (10), by accumulating at least one dopant species (e.g., P, B, As) in an asher chamber and forming the accumulated dopant species (40) on an exposed portion (32, 33) of the substrate. A target concentration for the plasma chamber dopant species is determined by test or measurement. The asher is used to form the dopant species on the substrate, and the dopant species is driven (41) into the substrate. A threshold voltage is measured on the substrate to verify or confirm that a proper dopant level has been achieved.