| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a trench where an aperture ratio is≥10% and≤50% and a depth is≥20μm and≤150μm. SOLUTION: The method includes a process for forming the trench by adopting an oxide film and a metallic film, which are formed in order on the surface of the semiconductor substrate, as a trench mask; and a process for forming a gate oxide film on the surface of the semiconductor substrate after the process. Furthermore, it is preferable that the method includes a process for performing isotropic etching with respect to the inner wall of the trench when the metallic film is removed after the process for forming the trench. COPYRIGHT: (C)2007,JPO&INPIT
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