发明名称 |
NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS |
摘要 |
There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.
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申请公布号 |
US2011129765(A1) |
申请公布日期 |
2011.06.02 |
申请号 |
US20100902868 |
申请日期 |
2010.10.12 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TANAKA AKINOBU;MASUNAGA KEIICHI;DOMON DAISUKE;WATANABE SATOSHI |
分类号 |
G03F1/00;C07C309/31;C07C381/12;C08F8/12;C08F212/14;C09K3/00;G03F7/004;G03F7/038;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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