发明名称 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.
申请公布号 US2011129765(A1) 申请公布日期 2011.06.02
申请号 US20100902868 申请日期 2010.10.12
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TANAKA AKINOBU;MASUNAGA KEIICHI;DOMON DAISUKE;WATANABE SATOSHI
分类号 G03F1/00;C07C309/31;C07C381/12;C08F8/12;C08F212/14;C09K3/00;G03F7/004;G03F7/038;G03F7/20 主分类号 G03F1/00
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