发明名称 Halbleiterbauteil mit Halbleiterchip und Umverdrahtungslage sowie Verfahren zur Herstellung desselben
摘要 The invention relates to a semiconductor device with a semiconductor chip and a rewiring layer, the semiconductor chip being embedded in a housing plastics composition by its rear side contact. The active top side of the semiconductor chip forms a coplanar overall top side with the top side of the housing plastics composition. The rear side contact is led to the overall top side via a flat conductor sheet tape, so that the rear side contact of the semiconductor chip can be accessed from the overall top side.
申请公布号 DE10352946(B4) 申请公布日期 2007.04.05
申请号 DE2003152946 申请日期 2003.11.11
申请人 INFINEON TECHNOLOGIES AG 发明人 FUERGUT, EDWARD;WOERNER, HOLGER;VILSMEIER, HERMANN
分类号 H01L23/50;H01L21/56;H01L21/60;H01L21/68;H01L21/98;H01L23/498;H01L25/065 主分类号 H01L23/50
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