| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows the quality of pores to be checked each serving as the starting point of the crystal growth for forming a thin film transistor, and which can check whether or not silicon crystal grains of a desired size are formed. SOLUTION: A starting point forming step for forming a plurality of starting points for crystallizing a semiconductor film on a substrate forms a plurality of pores (recesses) 123 of a specified size (pore diameter 0.8μm) with a specified spacing (5μm) in element forming regions of the substrate; and forms a plurality of pores of a specified size, a plurality of pores 123a of sizes (pore diameter 0.7μm) and 123b (pore diameter 0.9 um) different from the specified size, and a plurality of pores (4μm, 6μm) with a different spacing from the specified spacing in test pattern regions B. The quality of pores each serving as the starting point of the crystal growth is checked from silicon crystal grains grown from such starting parts (pores), and whether the silicon crystal grains of a desired size are formed is also checked. COPYRIGHT: (C)2007,JPO&INPIT |
