MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To fully ensure a thickness on a void of an insulating film formed on front surfaces of a trench and a semiconductor substrate. SOLUTION: In a trench formation process by a manufacturing method of a semiconductor device, a trench 102 is formed on a front surface of a p-type semiconductor substrate 101. In an implantation process, an n-type dopant is implanted to the trench 102 formed by the trench formation process. In an insulating film formation process, an insulating film 601 is formed in the trench 102 to which the n-type dopant is implanted by the implantation process by using a viscous insulating application material. COPYRIGHT: (C)2007,JPO&INPIT