发明名称 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
摘要 A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.
申请公布号 AU2001286649(B2) 申请公布日期 2007.04.05
申请号 AU20010286649 申请日期 2001.08.22
申请人 PRESIDENT AND FELLOWS OF HARVARD COLLEGE 发明人 YING CUI;XIANGFENG DUAN;CHARLES M LIEBER;YUNG-SHENG HUANG
分类号 H01L29/73;C30B11/00;C30B25/00;G01N27/12;G01N27/414;G01N33/543;G11C13/02;H01L21/329;H01L21/331;H01L23/532;H01L27/10;H01L29/06;H01L29/207;H01L29/267;H01L29/88;H01L33/06;H01L33/18;H01L51/00;H01L51/30 主分类号 H01L29/73
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