Microelectronic device having floating gate protective layer and method of manufacture therefor

摘要

A method of manufacturing a microelectronic device including forming a memory cell having a floating gate located over a substrate, a dielectric layer over the floating gate, and a control gate located over a portion of the dielectric layer, wherein a portion of the dielectric layer is laterally disposed from the control gate. A protective layer is formed over the control gate and the dielectric layer. A mask having an opaque portion over the dielectric layer portion and an opening over the control gate is provided, and the protective layer is patterned employing the mask.