| 摘要 |
PROBLEM TO BE SOLVED: To surely obtain a thin film semiconductor at a lower cost and with ease. SOLUTION: The manufacturing method comprises a step wherein the top surface of a semiconductor substrate is changed into a porous layer having a porous surface layer, an intermediate porosity rate layer which is formed below the surface layer and has a larger porosity rate compared with the surface layer, and a high porosity rate layer which is formed inside or on a lower layer of the intermediate porosity rate layer and has a larger porosity rate compared with the surface layer and intermediate porosity rate layer; a step to form a semiconductor film on the porous layer; and a step to separate the semiconductor film from the semiconductor substrate via the porous layer. COPYRIGHT: (C)2007,JPO&INPIT
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