POWER SEMICONDUCTOR MODULE AND A METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a method for producing a power semiconductor module (1), wherein a contact (40-43) is formed between a contact area (20-23) and a contact element (30-32) in the form of an ultrasound-welded contact, a sonotrode (50) used for the ultrasound welding process is also used for assembling the contact areas (20-23) with contact ends (33, 34) and, thereby for assembling contacts (40, 42) with base areas (F, F1-F3).