发明名称 |
Semiconductor device having a hole or a step of normal mesa shape as viewed from any cross-section and manufacturing method of the same |
摘要 |
A semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. A hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. A wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate is used.
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申请公布号 |
US2007073448(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20060583885 |
申请日期 |
2006.10.20 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
TAKUBO CHISAKI;YAMADA HIROJI;MOCHIZUKI KAZUHIRO;TANAKA KENICHI;TANOUE TOMONORI;UCHIYAMA HIROYUKI |
分类号 |
G05D1/10 |
主分类号 |
G05D1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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