| 摘要 |
PROBLEM TO BE SOLVED: To reduce damage on a gate insulation film or a semiconductor substrate when a metal gate electrode is formed. SOLUTION: When gate electrodes 12 and 22 are formed, a first metal layer 31 of low etching rate is formed thin in one of two regions for forming first and second MOSFETs 10 and 20 under predetermined etching conditions and a second metal layer 32 of high etching rate is formed thick in the other region under those predetermined etching conditions, and then the first and second metal layers 31 and 32 are etched simultaneously. Consequently, difference in etching rate is offset by difference in thickness and etching of the first and second metal layers 31 and 32 can be ended simultaneously or substantially simultaneously. Etching damage on the gate insulation films 11 and 21 or the Si substrate 2 can thereby be minimized. COPYRIGHT: (C)2007,JPO&INPIT
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