发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A method for fabricating a semiconductor device includes the steps of forming a high-k layer insulating layer on a SOI substrate; forming a gate electrode layer on the high-k insulating layer; forming a resist layer on the gate electrode layer; removing selectively the gate electrode layer using the resist layer as a mask; and removing the resist layer by an ashing process using a gas that does not comprise oxygen.
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申请公布号 |
US2007072403(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20060526698 |
申请日期 |
2006.09.26 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
SAKATA TOYOKAZU |
分类号 |
H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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