| 摘要 |
<P>PROBLEM TO BE SOLVED: To stabilize characteristics by preventing warpage of a semiconductor light-emitting element wafer. <P>SOLUTION: This element has a configuration in which an n-type layer 2 consisting of an Si-doped GaN, intermediate layer 3 containing at least Si-doped In and having a film thickness of 10 nm-100 nm, second n-type layer 4 consisting of Si-doped GaN, cladding layer 5 consisting of undoped AlGaN, active layer 6 of a multiple quantum well structure and p-type layer 7 consisting of Mg-doped AlGaN are successively stacked on a GaN substrate 1, a p-side electrode 8 is formed on the p-type layer 7 and an n-side electrode 9 is formed on the surface of the second n-type layer 4 exposed by removing a part of a multilayer structure from the p-type layer 7 to the second n-type layer 4. <P>COPYRIGHT: (C)2007,JPO&INPIT |
