Halbleiteranordnung mit isoliertem Gate und Verfahren zu ihrer Herstellung,申请号DE1996636913-传众专利搜索

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发明名称	Halbleiteranordnung mit isoliertem Gate und Verfahren zu ihrer Herstellung
摘要
申请公布号	DE69636913(D1)	申请公布日期	2007.03.29
申请号	DE1996636913	申请日期	1996.05.09
申请人	MITSUBISHI DENKI K.K.	发明人	TAKAHASHI, HIDEKI
分类号	H01L29/739;H01L29/78;H01L21/331;H01L29/06;H01L29/10	主分类号	H01L29/739
代理机构		代理人
主权项
地址

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