| 摘要 |
PROBLEM TO BE SOLVED: To provide a ceramic-metal compound circuit board in which heat from a semiconductor device can be dissipated efficiently. SOLUTION: In the ceramic-metal compound circuit board and a method for manufacturing it, a void rate is set to 1.5% or less and a diameter is set to 0.7 mm or less in a bonded interface of a semiconductor mounted part on a metal plate boned on a main surface of a ceramic board. Furthermore, an alumina board with 15μm/20 mm or less measured by a surface roughness meter is used as the ceramic board. In the active metal method, the void rate can be set to 1.5% or less and the diameter can be set to 0.7 mm or less under debinder condition of 600°C×4 hr or more or 650°C×2 hr or more. COPYRIGHT: (C)2007,JPO&INPIT
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