| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light-emitting element having a structure capable of largely shifting a light-emitting wavelength due to an increase in operation current density without reducing light-emitting efficiency. <P>SOLUTION: The GaN-based semiconductor light-emitting element is provided with (A) a first GaN-based compound semiconductor layer 13 having an n conductive type, (B) an active layer 15 having a multiple quantum well structure consisting of wells and a barrier layer for partitioning the well layers from each other, and (C) a second GaN-based compound semiconductor layer 17 having p conductive type. In this element, the well layers are arranged in the active layer 15 so that d<SB>1</SB>>d<SB>2</SB>is satisfied, where d<SB>1</SB>is a well layer density of the first GaN-based compound semiconductor layer side in the active layer 15 and d<SB>2</SB>is well layer density in the second GaN-based compound semiconductor layer side. <P>COPYRIGHT: (C)2007,JPO&INPIT |
