| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which combines resistance against noises and resistance against a surge current. SOLUTION: A protection circuit 110 in the semiconductor device 100 has an n-MOS 112 electrically connected to a ground line GND, and a p-MOS 111 connected between a power line VDD and the n-MOS 112. The p-MOS 111 conducts a current to electrically connect the power line VDD to the n-MOS 112 when a given bias voltage is generated between the power line VDD and the ground line GND, that is, an operating voltage is applied to the power line VDD. COPYRIGHT: (C)2007,JPO&INPIT
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