发明名称 Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip
摘要 In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Ga<SUB>x</SUB>(In<SUB>y</SUB>Al<SUB>1-y</SUB>)<SUB>1-x</SUB>P wherein 0.8<=x and 0<=y<=1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.
申请公布号 US7195991(B2) 申请公布日期 2007.03.27
申请号 US20050524186 申请日期 2005.02.08
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 KARNUTSCH CHRISTIAN;STAUSS PETER;STREUBEL KLAUS
分类号 H01L21/00;H01L21/205;H01L33/00;H01L33/30 主分类号 H01L21/00
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