发明名称 |
Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip |
摘要 |
In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Ga<SUB>x</SUB>(In<SUB>y</SUB>Al<SUB>1-y</SUB>)<SUB>1-x</SUB>P wherein 0.8<=x and 0<=y<=1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.
|
申请公布号 |
US7195991(B2) |
申请公布日期 |
2007.03.27 |
申请号 |
US20050524186 |
申请日期 |
2005.02.08 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
KARNUTSCH CHRISTIAN;STAUSS PETER;STREUBEL KLAUS |
分类号 |
H01L21/00;H01L21/205;H01L33/00;H01L33/30 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|