| 摘要 |
An image sensor is formed by providing a semiconductor substrate having first, second and third pixel regions and first and second color filters disposed on their respective pixel regions. A photoresist layer is coated over the first and second color filters and the third color pixel region. The photoresist is removed from the first and second color filters, leaving a third color filter of substantially the same height as the first and second color filters. Micro lenses may then be formed on the color filters.
|
