| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent exposure of a gate conductive layer and generation of an electrical short between a gate and a landing plug by performing an etching process for forming a landing plug contact hole after a spacer buffer layer formed on a gate hard mask layer is selectively removed. A semiconductor substrate(300) is provided. An isolation layer(301) defining an active region is formed on the semiconductor substrate. A part of a thickness at both sides of the active region of the substrate is etched along a longitudinal length to have the active region stepped. A gate(350) is formed on a stepped unit of the stepped active region. The gate is a laminated layer of a gate dielectric(310), a gate conductive layer(320), and a gate hard mask layer(340). A buffer layer(360a) is formed on the entire surface of the resultant structure to surround the gate. A mask layer is formed on the buffer layer to cover the gate. A part of a thickness of the mask layer to expose the buffer part formed on the gate hard mask layer. The buffer part formed on the exposed gate hard mask is removed. The mask layer is removed. A spacer dielectric(360b) is formed on the whole surface of the resultant structure to surround the gate. An interlayer dielectric(370) is formed on the spacer dielectric to cover the gate. The interlayer dielectric, the spacer dielectric, and the buffer layer are etched to form a landing plug contact hole exposing the substrate region between the gates.
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