Fabricating method for phosphorus- and arsenic- doped p-type ZnO thin films with ampoule-tube method,申请号KR20050045764-传众专利搜索

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发明名称	Fabricating method for phosphorus- and arsenic- doped p-type ZnO thin films with ampoule-tube method
摘要
申请公布号	KR100698588(B1)	申请公布日期	2007.03.22
申请号	KR20050045764	申请日期	2005.05.30
申请人		发明人
分类号	C23C16/40	主分类号	C23C16/40
代理机构		代理人
主权项
地址

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