ADAPTIVE ELECTROLYTIC POLISHING USING MEASUREMENT VALUE OF THICKNESS AND REMOVAL OF BARRIER AND SACRIFICE LAYER

摘要

PROBLEM TO BE SOLVED: To effectively polish a metal layer formed on a semiconductor wafer. SOLUTION: There is provided a method of polishing a metal layer (612) formed on a semiconductor wafer, wherein this metal layer (612) is formed on a barrier layer (604), the barrier layer (604) is formed on a dielectric layer (608) provided with a recessed region (606) and a non-recessed region (610), and in the metal layer (612) covering the recessed region (606) and the non-recessed region (610) of the dielectric layer, there are the steps of polishing the metal layer (612); removing the metal layer (612) covering the non-recessed region (610); and polishing the metal layer in the recessed region (606) to a height of the non-recessed region (610), with this height set to not less than the thickness of the barrier layer (604). COPYRIGHT: (C)2007,JPO&INPIT