| 摘要 |
A method for forming a semiconductor device is provided. In accordance with the method, a substrate ( 103 ) is provided, and a dielectric material ( 123 ) is formed on the substrate through plasma enhanced chemical vapor deposition (PECVD). The PECVD is conducted at a temperature of greater than 300° C., and utilizes an atmosphere comprising nitrogen, silane, ammonia, and helium.
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