| 摘要 |
A ferroelectric memory device is provided to reduce a fabricating cost and simplify a fabricating process of a non-volatile memory by embodying a non-volatile memory while using one simple transistor structure. A source/drain region(2,3) is formed in a predetermined region of a semiconductor substrate(1). A channel region(4) is formed between the source region and the drain region. An organic ferroelectric layer(60) is formed in its corresponding part of the channel region on the semiconductor substrate. A source electrode(6), a drain electrode(7) and a gate electrode(8) are formed on the source region, the drain region and the organic ferroelectric layer, respectively. The organic ferroelectric layer is coupled to the semiconductor substrate by one of a van der Waals' bond or a hydrogen bond. The organic ferroelectric layer can be a PVDF(Polyinylideneflouride) layer.
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