发明名称 |
SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM |
摘要 |
The invention concerns a substrate, in particular made of silicon carbide, coated with a thin stoichiometric film of silicon nitride, for making electronic components, and a method for obtaining such a film. The method for obtaining the film on the substrate (1) in the presence of at least one nitrogen-containing gas, consists in coating a layer (2) of a material permeable to said gas and causing the silicon nitride film to be formed at the interface between the substrate and the material layer. The invention is applicable in particular in microelectronics. |
申请公布号 |
WO2007003639(A3) |
申请公布日期 |
2007.03.15 |
申请号 |
WO2006EP63858 |
申请日期 |
2006.07.04 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;UNIVERSITE PARIS SUD (PARIS XI);SOUKIASSIAN, PATRICK |
发明人 |
SOUKIASSIAN, PATRICK |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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