发明名称 |
Systems and methods for a reference circuit in a dual bit flash memory device |
摘要 |
A dual bit flash device comprising a core cell array, each cell of the core cell array is configured to store two bits of data, and a single reference array, each cell of the single reference array comprising a first bit programmed to a low threshold voltage and a second bit programmed to a high threshold voltage.
|
申请公布号 |
US2007058439(A1) |
申请公布日期 |
2007.03.15 |
申请号 |
US20050223357 |
申请日期 |
2005.09.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
KUO NAI-PING;CHEN HAN-SUNG;CHEN KEN-HUI;HUNG CHUN-HSIUNG |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|