| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which solves problems of a prior art three-dimensional memory cell and provides size of more minute, and the manufacturing method thereof. <P>SOLUTION: In a trench formed through dielectric films (6, 8, 10 and 12) laminated on a semiconductor substrate (1), a capacitor composed of a storage electrode (19), a capacitor dielectric film (20), and a plate electrode (21) is formed, and buried wiring layers (9 and 11) are formed below the capacitor. Since the capacitor is formed not in the semiconductor substrate but above it, there is a room of area where the capacitor can be formed, and by using the wiring layers (9 and 11) as a global word line and a selector line, the difficulty of forming wiring is reduced. Moreover, since the upper surface of a dielectric film (32) being in contact with the lower surface of wiring (34) of a peripheral circuit region, extends to a memory cell region so as to be in contact with the side of the capacitor (33), a step height between the peripheral circuit region and the memory cell region is remarkably reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT |
