THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To take a large on/off ratio as a transistor and to prevent a hysteresis from occurring on a current value with respect to sweep of gate voltage or source-drain voltage. SOLUTION: A thin film transistor comprises a substrate; an insulating layer formed on one surface of the substrate; a film formed on the insulating layer and made of a graphite based material containing a six membering ring; an organic material layer formed on the film by vacuum deposition, and made of an organic material containing a six membering ring; a first electrode formed on the other surface of the substrate; a second electrode formed on the organic material layer; and a third electrode formed on the organic material layer. COPYRIGHT: (C)2007,JPO&INPIT