发明名称 DISPOSITIF SEMI-CONDUCTEUR A HETEROJONCTIONS ET A STRUCTURE INTER-DIGITEE
摘要 The device has a doped amorphous semiconductor region (6) with one type of conductivity on a crystalline side (3) of a semiconductor substrate (1). The substrate has, on the same side (3), doped amorphous semiconductor regions (7a, 7b) with another type of conductivity, opposite to the former type of conductivity. The regions (6, 7a, 7b) form an interdigitated structure and are isolated from each other by dielectric regions (8a-8d). Independent claims are also included for the following: (A) a solar cell module comprising multiple solar cells (B) a method for producing a semiconductor device.
申请公布号 FR2880989(B1) 申请公布日期 2007.03.09
申请号 FR20050050174 申请日期 2005.01.20
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ETABLISSEMENT PUBLIC A CARACTERE SCIENTIFIQUE TECHNIQUE ET INDUSTRIEL 发明人 RIBEYRON PIERRE JEAN
分类号 H01L29/06;H01L27/142;H01L31/04;H01L31/0745;H01L31/0747;H01L31/109;H01L31/18 主分类号 H01L29/06
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