METHOD OF GE NANOCLUSTERS

摘要

A method for fabricating germanium nano clusters is provided to be usefully applied in fabricating a flash memory device by easily forming germanium nano clusters uniformly embedded in a silicon oxide layer. A silicon oxide layer is formed on a silicon substrate(10). A GeO layer is formed on the silicon oxide layer in oxygen atmosphere of a low density. The GeO layer is transformed into a GeO2 layer and Ge nano clusters(50) wherein the substrate is annealed at the temperature of 600 deg.C. The GeO2 layer is transformed into a SiO2 layer(70).