发明名称 SUBSTRATE TREATMENT DEVICE, METHOD AND PROGRAM FOR CONVEYING SUBSTRATE OF SUBSTRATE TREATMENT DEVICE, AND RECORDING MEDIUM RECORDING THE PROGRAM
摘要 PROBLEM TO BE SOLVED: To enhance the adhesiveness of a film deposited on a substrate through a next film deposition by reliably removing deposits including a native oxide film. SOLUTION: A substrate treatment device 100 has a common conveying chamber 102 which is commonly connected to treatment chambers 104A-104D for conveying a wafer to/from each treatment chamber. The treatment chambers 104A-104D consist of a product generation chamber (a COR treatment chamber) for generating a product by performing the chemical reaction of deposits including a native oxide film on the wafer with gas elements, a product removing chamber (a PHT treatment chamber) for removing the product of the deposits on the wafer through the heat treatment, a Ti film deposition chamber for depositing a Ti film on the wafer, and a TiN film deposition chamber for depositing a TiN film on the Ti film. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007056336(A) 申请公布日期 2007.03.08
申请号 JP20050244792 申请日期 2005.08.25
申请人 TOKYO ELECTRON LTD 发明人 KANAMARU HIDETADA
分类号 C23C16/44;H01L21/302;H01L21/31;H01L21/677 主分类号 C23C16/44
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