| 摘要 |
A test pattern of a CMOS image sensor is provided to reduce a development time and a development cost by monitoring exactly electrical properties of a photodiode. Red, green and blue photodiodes are vertically arranged in a CMOS image sensor. A test pattern is used for evaluating electrical properties of the photodiode of the CMOS image sensor. An arbitrary photodiode region with at least adjacent two photodiodes among red, green and blue photodiodes is formed like a comb type structure on a first conductive type epitaxial layer(21). A plug(23a) composed of at least one or more layers is formed at each of the adjacent two photodiodes by using an ion implantation process.
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