| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide (1) a new acetal compound useful as a monomer for the production of a photoresist material having excellent adhesiveness and transparency in a photo-lithography to use light of ≤300 nm wavelength, especially KrF or ArF excimer laser light as a light source, (2) a polymer compound having excellent reactivity, rigidity and substrate adhesiveness, (3) a resist material produced by using the polymer compound as a base resin and having good resolution and etching resistance considerably superior to those of conventional material, and (4) a patterning method to use the resist material. <P>SOLUTION: The polymer compound has a weight-average molecular weight of 1,000-500,000 and comprises a repeating unit expressed by general formula (4-1) or (4-2). The resist material produced by using the polymer compound as a base resin is useful for a microfabrication with electron beam or far-ultraviolet ray. <P>COPYRIGHT: (C)2007,JPO&INPIT |
