COMPOSITION AND METHOD FOR REMOVING THICK FILM PHOTORESIST

摘要

A thick film photoresist and/or residue removal composition and process for removing thick film photoresist and/or post-ash and post-etch residue from a microelectronic assembly having same thereon. The removal composition includes at least one organic acid, at least one organic solvent, and water. The composition achieves at least partial removal of thick film photoresist and residue from the surface of the microelectronic assembly with minimal etching of metal species on the assembly and without damage to low-k dielectric materials employed in the assembly architecture.