SCANNING EXPOSURE APPARATUS

摘要

In a scanning exposure apparatus (100), a pattern in a laser irradiation region (103) in a mask (102) is reduced 1/8 and projected on a wafer (105) placed on a wafer stage (106) by a reduction projection optical system (104). A stroke length at a uniform velocity in scanning on a mask stage (101) is approximately 530mm, which is approximately four times longer compared with that of approximately 140mm in the conventional exposure apparatus. Thus, as a size of a lithography region in the mask (102), a length of 528mm is covered. A length of 66mm is ensured on the wafer (105) in an X direction in the exposure region formed by the reduction projection optical system (104).