| 摘要 |
PROBLEM TO BE SOLVED: To inhibit damage due to etching without increasing an area of chip of a semiconductor device. SOLUTION: An integrated circuit including a MOS transistor 111 is formed in a device area 110, and a diffusion area 121 for discharging is formed in a grid area 120. The diffusion area 121 for discharging is connected to the metal wiring 137 of the integrated circuit through a contact hole 134. Accordingly, when the metal wiring 137 is formed by a dry etching, the charge in the metal wiring 137 is discharged from the diffusion area 121 for discharging to a semiconductor substrate 100, thereby reducing the damage due to etching of the MOS transistor 111. In addition, since the diffusion area 121 for discharging 121 and a contact hole 134 are formed in the grid area 120, they are cut off by a dicing process. Accordingly, the area of chip of the semiconductor device does not increase. COPYRIGHT: (C)2007,JPO&INPIT |
