| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor lamination substrate useful for manufacturing a semiconductor light emitting device of a higher luminance, and a method of manufacturing the semiconductor lamination substrate, as well as the semiconductor light emitting device. <P>SOLUTION: A semiconductor lamination substrate 1 for a nitride semiconductor light emitting device is formed of nitride semiconductor layers constituted by laminating an n-type nitride semiconductor layer 3, a light emitting layer 4, and a p-type nitride semiconductor layer 5 on a substrate 2 in this order. In the substrate 1, the p-type nitride semiconductor layer 5 consists of nitride semiconductor layers in which a large number of inorganic particles 6 are allotted, and a part of the inorganic particles 6 is exposed on a front surface of the p-type nitride semiconductor layer 5. Consequently, the semiconductor light emitting device given by the semiconductor lamination substrate 1 shows a high luminance. <P>COPYRIGHT: (C)2007,JPO&INPIT |
