发明名称 SEMICONDUCTOR SYSTEM HAVING RING LASER MANUFACTURED BY EPITAXIAL LAYER GROWTH
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a ring laser system that is high in yield and low in cost. <P>SOLUTION: An optical core 110 is formed on an intermediate layer 106 by an epitaxial layer growth, then a multiple quantum well 112 is formed adjacent to the optical core 110, and then an outside structure 116 including a total internal, reflecting body is formed, thereby a ring laser system 300 is configured. In the ring laser system 300, photons generated in the inside of the multiple quantum well 112 are circulated within a ring laser structure, including the outside structure 116, the multiple quantum well 112, and the optical core 110, then limitted from a noncontinuous portion 114 attached to the outside structure 116. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007059909(A) 申请公布日期 2007.03.08
申请号 JP20060225352 申请日期 2006.08.22
申请人 AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE LTD 发明人 TAN MICHAEL R T;CORZINE SCOTT W;BOUR DAVID P
分类号 H01S5/10 主分类号 H01S5/10
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