MAGNETORESISTANCE EFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which has a large resistance variation quantity as a current-perpendicular-to-plane magnetoresistance element, to provide a magnetic head which uses the same and a magnetic reproducing device.

SOLUTION: Spin filter effect of electrons can be obtained by modulating the band structure of a ferromagnetic layer nearby a very thin film layer made of oxide or nitride by inserting the thin film layer into a ferromagnetic layer of the magnetoresistance effect element or the interface between the ferromagnetic layer and a nonmagnetic spacer layer. Consequently, the magnetoresistance effect element can be provided which has a high MR variation rate within a temperature range of room temperature or above it without increasing the element resistance.

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