THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

A TFT is provided to reduce kink effect and drain current caused by an LEF(lateral electric field) formed in a drain region by connecting a channel layer to a source region in a semiconductor layer. A gate electrode(202) is disposed on a substrate. A gate insulation layer is positioned on the gate electrode. A semiconductor layer is positioned on the gate insulation layer, including a channel region(204C) and a source/drain region. An interconnection part(207) is positioned on the channel region of the semiconductor layer. A source electrode(208S) is positioned on the source region of the semiconductor layer, electrically connected to the interconnection part. A drain electrode(208D) is positioned on the drain region of the semiconductor layer. A high-doped silicon layer is positioned between the source/drain region and the source/drain electrode of the semiconductor layer.